Methylsilane

• Catalog No.: 462993
• CAS Number: 992-94-9
• M. F.: CH6Si
• M. W.: 46.14384
• Purity: ≥99.9%

SYNONYMS

• Title: 甲基硅烷
• IUPAC name: methylsilane
• IUPAC Traditional name: silane, methyl-

DATABASE IDS

• PubChem SID: 24869881
• EC Number: 213-598-5
• MDL Number: MFCD00053655
• Beilstein Number: 1730728
• CAS Number: 992-94-9

PROPERTIES

• Grade: electronic grade
• Impurities: <10 ppm Carbon dioxide (CO2)
• Impurities: <10 ppm Nitrogen (N2)
• Impurities: <100 ppm Dimethylsilane (CH3)2SiH2
• Impurities: <100 ppm Methylchlorosilane CH3SiH2Cl
• Impurities: <2 ppm Argon + Oxygen (Ar + O2)
• Impurities: <50 ppm Methane (CH4)
• Impurities: <50 ppm Silane (SiH4)
• Linear Formula: CH3SiH3
• Purity: ≥99.9%
• Apperance: liquid
• Boiling Point: -57 °C(lit.)
• Melting Point: -157 °C(lit.)
• Vapor Density: 0.628 (-58 °C, vs air)
• GHS Signal Word: Danger
• GHS Hazard statements: H220-H280-H312-H332
• European Hazard Symbols: Highly flammable (F+)
• European Hazard Symbols: Harmful (Xn)
• Personal Protective Equipment: Eyeshields, Faceshields, Gloves, half-mask respirator (US), multi-purpose combination respirator cartridge (US)
• GHS Precautionary statements: P210-P280-P410 + P403
• RID/ADR: UN 3161 2.1
• Risk Statements: 12-14-20/21
• Safety Statements: 16-24-26-36/37/39
• Supplemental Hazard Statements: Reacts violently with water.
• Hazard Class: 2.1
• UN Number: 3161
• German water hazard class: 3

DETAILS

Description (English)

Packaging
10, 20 g in ss cylinder
Features and Benefits
Methylsilane is used in the plasma-assisted CVD of silicon carbide (SiC) and as a precursor to the epitaxial growth of SiGeC alloy layers via rapid thermal CVD.1 Recent developments include the use of methylsilane as a precursor to silicon-carbon-hydrogen polymer used as photoresists.
Precursor to silicon carbide or alloy thin films by chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).
Recommended products
Stainless steel regulators Z527416 or Z527424 are recommended.

Description (简体中文)

包装
10, 20 g in ss cylinder
Features and Benefits
甲基硅烷用于碳化硅 (SiC) 的等离子体辅助 CVD，以及作为 SiGeC 合金层通过快速热 CVD 法外延生长的前体。1最新的进展包括使用甲基硅烷作为硅-碳-氢聚合物（用作光致抗蚀剂）的前体。
通过化学气相沉积 (CVD) 和分子束外延 (MBE) 形成碳化硅或合金薄膜时的前体。
Recommended products
推荐使用不锈钢调节器 Z527416 或 Z527424。