Pentakis(dimethylamino)tantalum(V)

• Catalog No.: 496863
• CAS Number: 19824-59-0
• M. F.: C10H30N5Ta
• M. W.: 401.3266
• Purity: 99.99%

SYNONYMS

• Title: 五(二甲氨基)钽(V)
• IUPAC name: dimethyl[tetrakis(dimethylamino)tantalio]amine
• IUPAC Traditional name: dimethyl[tetrakis(dimethylamino)tantalio]amine
• Synonyms: Tantalum dimethylamide; TADMA; Ta(NMe2)5; PDMAT

DATABASE IDS

• MDL Number: MFCD01631286
• CAS Number: 19824-59-0
• PubChem SID: 24873088

PROPERTIES

• Linear Formula: Ta(N(CH3)2)5
• Purity: 99.99%
• Apperance: solid
• Melting Point: 100 °C (dec.)(lit.)
• GHS Signal Word: Danger
• GHS Hazard statements: H260-H314
• European Hazard Symbols: Flammable (F)
• European Hazard Symbols: Corrosive (C)
• Personal Protective Equipment: Eyeshields, Faceshields, full-face particle respirator type N100 (US), Gloves, respirator cartridge type N100 (US), type P1 (EN143) respirator filter, type P3 (EN 143) respirator cartridges
• GHS Precautionary statements: P223-P231 + P232-P280-P305 + P351 + P338-P370 + P378-P422
• RID/ADR: UN 3131 4.3/PG 1
• Risk Statements: 11-14/15-34
• Safety Statements: 16-26-36/37/39-43-45
• Supplemental Hazard Statements: Reacts violently with water.
• Hazard Class: 4.3
• UN Number: 3131
• Packing Group: 1
• German water hazard class: 3

DETAILS

Description (English)

Features and Benefits
Volatile solid CVD precursor to tantalum nitride (TaN) thin films. Also yields tantalum oxide (Ta2O5) thin films when O2, H2O, NO or H2O2 is present during the deposition process.1,2 Ta2O5 thins films show promise as gate dielectric materials in the manufacture of integrated circuits.
General description
Atomic number of base material: 73 Tantalum
Packaging
5 g in glass bottle

Description (简体中文)

Features and Benefits
氮化钽 (TaN) 薄膜的挥发性固体 CVD 前体。当在沉积过程中存在 O2、H2O、NO 或 H2O2 时，还会形成氧化钽 (Ta2O5) 薄膜。1,2 Ta2O5 薄膜作为集成电路制造中的栅电介质材料具有广阔的应用前景。
General description
Atomic number of base material: 73 Tantalum
包装
5 g in glass bottle