dimethyl[tetrakis(dimethylamino)tantalio]amine

• ChemBase ID: 146587
• Molecular Formular: C10H30N5Ta
• Molecular Mass: 401.3266
• Monoisotopic Mass: 401.19811599
• SMILES: CN(C)[Ta](N(C)C)(N(C)C)(N(C)C)N(C)C
• Canonical SMILES: CN([Ta](N(C)C)(N(C)C)(N(C)C)N(C)C)C
• InChI: InChI=1S/5C2H6N.Ta/c5*1-3-2;/h5*1-2H3;/q5*-1;+5
• InChIKey: VSLPMIMVDUOYFW-UHFFFAOYSA-N

NAMES AND DATABASE IDS

Names

• IUPAC name: dimethyl[tetrakis(dimethylamino)tantalio]amine
• IUPAC Traditional name: dimethyl[tetrakis(dimethylamino)tantalio]amine
• Synonyms: PDMAT; TADMA; Ta(NMe2)5; Tantalum dimethylamide; Pentakis(dimethylamino)tantalum(V); 五(二甲氨基)钽(V)

Database IDs

• CAS Number: 19824-59-0
• MDL Number: MFCD01631286
• PubChem SID: 162240781; 24873088
• PubChem CID: 140614

CALCULATED PROPERTIES

• H Acceptors: 5
• H Donor: 0
• LogD (pH = 5.5): -6.9709573
• LogD (pH = 7.4): -5.2143536
• Log P: -1.059
• Molar Refractivity: 69.467 cm^3
• Polarizability: 34.20338 Å^3
• Polar Surface Area: 16.2 Å^2
• Rotatable Bonds: 5
• Lipinski's Rule of Five: true

PROPERTIES

Physical Property

• Apperance: solid
• Melting Point: 100 °C (dec.)(lit.)

Safety Information

• European Hazard Symbols: Corrosive (C); Flammable (F)
• UN Number: 3131
• German water hazard class: 3
• Hazard Class: 4.3
• Packing Group: 1
• Risk Statements: 11-14/15-34
• Safety Statements: 16-26-36/37/39-43-45
• GHS Pictograms: GHS02; GHS05
• GHS Signal Word: Danger
• GHS Hazard statements: H260-H314
• GHS Precautionary statements: P223-P231 + P232-P280-P305 + P351 + P338-P370 + P378-P422
• Personal Protective Equipment: Eyeshields, Faceshields, full-face particle respirator type N100 (US), Gloves, respirator cartridge type N100 (US), type P1 (EN143) respirator filter, type P3 (EN 143) respirator cartridges
• RID/ADR: UN 3131 4.3/PG 1
• Supplemental Hazard Statements: Reacts violently with water.

Product Information

• Purity: 99.99%
• Linear Formula: Ta(N(CH3)2)5

DETAILS

Sigma Aldrich - 496863

Features and Benefits
Volatile solid CVD precursor to tantalum nitride (TaN) thin films. Also yields tantalum oxide (Ta2O5) thin films when O2, H2O, NO or H2O2 is present during the deposition process.1,2 Ta2O5 thins films show promise as gate dielectric materials in the manufacture of integrated circuits.
General description
Atomic number of base material: 73 Tantalum
Packaging
5 g in glass bottle