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Monodispersed silicon nanowires_Molecular_structure_CAS_)
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Monodispersed silicon nanowires

Catalog No. 730874 Name Sigma Aldrich
CAS Number Website http://www.sigmaaldrich.com
M. F. Si Telephone 1-800-521-8956
M. W. 28.0855 Fax
Purity Email
Storage Chembase ID: 135823

SYNONYMS

IUPAC name
silicon
IUPAC Traditional name
silicon
Synonyms
NanoFET-PIP

DATABASE IDS

EC Number 200-661-7
MDL Number MFCD00085311

PROPERTIES

Compostion , >99% ( Silicon-basis)
Contains >1 x 10^19 /cm3 Doping
diam. × L 150 nm ± 30 nm × 20 μm ± 2 μm
Apperance dispersion
Density 0.78 g/mL at 25 °C
Flash Point 12 °C
Flash Point 53.6 °F
GHS Pictograms GHS02
GHS Pictograms GHS07
GHS Signal Word Danger
GHS Hazard statements H225-H319-H336
European Hazard Symbols Flammable Flammable (F)
European Hazard Symbols Irritant Irritant (Xi)
MSDS Link Download
GHS Precautionary statements P210-P261-P305 + P351 + P338
Risk Statements 11-36-67
Safety Statements 7-16-24/25-26
German water hazard class 1

DETAILS

Description (English)
General description
This higher conductivity doped material can be used in a variety of electronic and optical devices including transistors, photovoltaics, sensors and piezoelectric generators. The P-i-P designation implies that the ends of these nanowires are P-type and the middle is intrinsic. The heavily p-doped ends should contact well with metals creating an ‘instant’ semiconductor. They can be assembled onto different substrates, such as flexible or transparent ones among others.Length of Undoped Channel = 3 μmReferences:1) Freer, E. M.; Grachev, O.; Duan, X.; Martin, S.; Stumbo, D. P. Nat. Nanotechnol., 2010, 5, 525-530.2) McAlpine, M. C.; Ahmad, H.; Wang, D.; Heath, J. R. Nat. Mater., 2007, 6, 379-384.
Typically 1 μg/mL in Isopropyl alcohol
Packaging
1 mL in glass bottle
Legal Information
Product of Nanosys, Inc.
Description (简体中文)
General description
This higher conductivity doped material can be used in a variety of electronic and optical devices including transistors, photovoltaics, sensors and piezoelectric generators. The P-i-P designation implies that the ends of these nanowires are P-type and the middle is intrinsic. The heavily p-doped ends should contact well with metals creating an ‘instant’ semiconductor. They can be assembled onto different substrates, such as flexible or transparent ones among others.Length of Undoped Channel = 3 μmReferences:1) Freer, E. M.; Grachev, O.; Duan, X.; Martin, S.; Stumbo, D. P. Nat. Nanotechnol., 2010, 5, 525-530.2) McAlpine, M. C.; Ahmad, H.; Wang, D.; Heath, J. R. Nat. Mater., 2007, 6, 379-384.
Typically 1 μg/mL in Isopropyl alcohol
包装
1 mL in glass bottle
Legal Information
Product of Nanosys, Inc.

REFERENCES