silicon

• ChemBase ID: 135823
• Molecular Formular: Si
• Molecular Mass: 28.0855
• Monoisotopic Mass: 27.97692653
• SMILES: [Si]
• Canonical SMILES: [Si]
• InChI: InChI=1S/Si
• InChIKey: XUIMIQQOPSSXEZ-UHFFFAOYSA-N

NAMES AND DATABASE IDS

Names

• IUPAC name: silicon
• IUPAC Traditional name: silicon
• Synonyms: Silicon; NanoFET-PIP; NanoFET; Monodispersed silicon nanowires; 硅

Database IDs

• CAS Number: 7440-21-3
• EC Number: 231-130-8; 200-661-7
• MDL Number: MFCD00085311
• PubChem SID: 24883543; 24883544; 24856222; 24883508; 24883552; 24879302; 24852908; 24856223; 24883547; 24883549; 24871099; 24883550; 24883553; 24861139; 24883476; 24883548; 162230094; 24883416; 24882537; 24883420
• PubChem CID: 5461123

CALCULATED PROPERTIES

• H Acceptors: 0
• H Donor: 0
• LogD (pH = 5.5): 0.045
• LogD (pH = 7.4): 0.045
• Log P: 0.045
• Molar Refractivity: 0.0 cm^3
• Polarizability: 2.245123 Å^3
• Polar Surface Area: 0.0 Å^2
• Rotatable Bonds: 0
• Lipinski's Rule of Five: true

PROPERTIES

Physical Property

• Apperance: crystalline (cubic (a = 5.4037)); dispersion; lumps; nanopowder; pieces; powder; wafer; wafer (single side polished)
• Melting Point: 1240 °C; 1410 °C(lit.)
• Boiling Point: 2355 °C(lit.)
• Flash Point: 12 °C; 53.6 °F
• Density: 0.773 g/mL at 25 °C; 0.78 g/mL at 25 °C; 2.33 g/mL at 25 °C(lit.)
• Semiconductor Properties: <100>, N-type; <100>, P-type; <111>, N-type; <111>, P-type

Safety Information

• RTECS: VW0400000
• European Hazard Symbols: Flammable (F); Irritant (Xi)
• UN Number: 1346
• German water hazard class: 1; 2
• Hazard Class: 4.1
• Packing Group: 3
• Risk Statements: 11; 11-36-67
• Safety Statements: 7-16-24/25-26
• GHS Pictograms: GHS02; GHS07
• GHS Signal Word: Danger; Warning
• GHS Hazard statements: H225-H319-H336; H228
• GHS Precautionary statements: P210; P210-P261-P305 + P351 + P338
• Personal Protective Equipment: Eyeshields, Gloves, type N95 (US), type P1 (EN143) respirator filter
• RID/ADR: UN 1346 4.1/PG 3

Product Information

• Purity: ≥98% trace metals basis; 98.5% trace metals basis; 99% trace metals basis; 99.95% trace metals basis; 99.999% trace metals basis; 99.9995% trace metals basis
• Grade: CP; optical grade
• Particle Size: <100 nm (TEM); -325 mesh; -60 mesh
• Compostion: , >99% ( Silicon-basis); , >99% (Silicon-basis)
• Contains: >1 x 10^19 /cm3 Doping; boron as dopant; phosphorus as dopant
• Does not contain: dopant
• Diam. × Thickness: 2 in. × 0.5 mm; 3 in. × 0.5 mm
• diam. × L: 150 nm ± 30 nm × 20 μm ± 2 μm
• Linear Formula: Si

DETAILS

Sigma Aldrich - 647675

Packaging
1 set in padded box
5 ea in rigid mailer
Physical properties
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ω
•cm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Sigma Aldrich - 647543

Packaging
1 ea in rigid mailer
5 ea in ampule
Physical properties
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity >1,000 Ω
•cm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Sigma Aldrich - 553069

Frequently Asked Questions
Live Chat and Frequently Asked Questions are available for this Product.
Physical form
random pieces

Sigma Aldrich - 647810

Packaging
1 set in padded box
Physical properties
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Sigma Aldrich - 647101

Packaging
1 ea in padded box
5 ea in rigid mailer
Physical properties
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 - 3000 Ωcm.
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Sigma Aldrich - 633097

Packaging
10, 25 g in glass bottle

Sigma Aldrich - 215619

Packaging
1 kg in poly bottle
50, 250 g in poly bottle

Sigma Aldrich - 647802

Packaging
1 ea in rigid mailer
Physical properties
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Sigma Aldrich - 647780

Packaging
1, 5 ea in rigid mailer
Physical properties
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Sigma Aldrich - 730866

General description
This material can be used in a variety of electronic and optical devices including transistors, photovoltaics, sensors and piezoelectric generators. They can be assembled onto different substrates, such as flexible or transparent ones amongst others.References:1) Freer, E. M.; Grachev, O.; Duan, X.; Martin, S.; Stumbo, D. P. Nat. Nanotechnol., 2010, 5, 525-530.2) McAlpine, M. C.; Ahmad, H.; Wang, D.; Heath, J. R. Nat. Mater., 2007, 6, 379-384.
Typically 1 μg/mL in Isopropyl alcohol
Packaging
1 mL in glass bottle
Legal Information
Product of Nanosys, Inc.

Sigma Aldrich - 647764

Packaging
1 ea in rigid mailer
Physical properties
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ω
•cm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Sigma Aldrich - 267414

Packaging
25 g in poly bottle

Sigma Aldrich - 343250

Packaging
50, 500 g in poly bottle

Sigma Aldrich - 647535

Packaging
1 ea in rigid mailer
5 ea in ampule
Application
0 vortex defects. Etch pitch density (EPD) <100 cm-2. Resistivity 1,000- 2,300 Ωcm
Physical properties
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Sigma Aldrich - 646687

Packaging
1, 5 ea in rigid mailer
Physical properties
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 - 3000 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Sigma Aldrich - 647705

Packaging
1 ea in rigid mailer
Physical properties
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Sigma Aldrich - 647799

Packaging
1 ea in rigid mailer
5 ea in padded box
Physical properties
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Sigma Aldrich - 730874

General description
This higher conductivity doped material can be used in a variety of electronic and optical devices including transistors, photovoltaics, sensors and piezoelectric generators. The P-i-P designation implies that the ends of these nanowires are P-type and the middle is intrinsic. The heavily p-doped ends should contact well with metals creating an ‘instant’ semiconductor. They can be assembled onto different substrates, such as flexible or transparent ones among others.Length of Undoped Channel = 3 μmReferences:1) Freer, E. M.; Grachev, O.; Duan, X.; Martin, S.; Stumbo, D. P. Nat. Nanotechnol., 2010, 5, 525-530.2) McAlpine, M. C.; Ahmad, H.; Wang, D.; Heath, J. R. Nat. Mater., 2007, 6, 379-384.
Typically 1 μg/mL in Isopropyl alcohol
Packaging
1 mL in glass bottle
Legal Information
Product of Nanosys, Inc.

Sigma Aldrich - 647772

Packaging
5 ea in ampule
Physical properties
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″