Silicon tetrafluoride

• Catalog No.: 463019
• CAS Number: 7783-61-1
• M. F.: F4Si
• M. W.: 104.0791128
• Purity: ≥99.99%

SYNONYMS

• Title: 四氟化硅
• IUPAC name: tetrafluorosilane
• IUPAC Traditional name: silicon tetrafluoride
• Synonyms: Silicon(IV) fluoride; 氟化硅(IV)

DATABASE IDS

• MDL Number: MFCD00040533
• CAS Number: 7783-61-1
• PubChem SID: 24869885
• EC Number: 232-015-5

PROPERTIES

• Grade: electronic grade
• Impurities: <0.5 ppm Carbon monoxide (CO)
• Impurities: <1 ppm Argon + oxygen (Ar + O2)
• Impurities: <1 ppm Carbon dioxide (CO2)
• Impurities: <10 ppm Methane (CH4)
• Impurities: <3 ppm Nitrogen (N2)
• Impurities: <50 ppm Hydrogen fluoride (HF)
• Linear Formula: SiF4
• Purity: ≥99.99%
• Boiling Point: -86 °C(lit.)
• Density: 3.57 g/mL at 25 °C(lit.)
• Melting Point: -90 °C(lit.)
• Transition Temperature: critical temperature -14.2 °C
• GHS Signal Word: Danger
• GHS Hazard statements: H300 +H310 + H330-H314
• European Hazard Symbols: Highly toxic (T+)
• Personal Protective Equipment: Faceshields, full-face respirator (US), Gloves, Goggles, multi-purpose combination respirator cartridge (US)
• GHS Precautionary statements: P260-P264-P280-P284-P301 + P310-P302 + P350
• RID/ADR: UN 1859 2.3
• Risk Statements: 14-26/27/28-31-34
• RTECS: VW2327000
• Safety Statements: 23-26-36/37/39-45
• Supplemental Hazard Statements: Contact with water liberates toxic gas., Reacts violently with water.
• Hazard Class: 2.3
• UN Number: 1859
• German water hazard class: 3

DETAILS

Description (English)

Application
Silicon tetrafluoride is used in ion-implantation processes and as a precursor to fluorinated silica via plasma-assisted CVD. Mixtures of SiF4-SiH4-H2 have recently been used to deposit polycrystalline silicon thin films via remote plasma chemical vapor deposition (RPCVD).1,2 Such fluorinated thin films show visible photoluminescence (PL) at room temperature.3
Packaging
100 g in steel cylinder
Recommended products
Monel control valves Z261793, Z261807 or Monel gas regulators Z405981, Z406007 are recommended.

Description (简体中文)

Application
四氟化硅用于离子注入过程，在等离子辅助化学气相沉积中作为氟化二氧化硅的前体。SiF4-SiH4-H2 混合物用于远距等离子辅助化学气相沉积法 (RPCVD) 沉积多晶硅薄膜。1,2这种氟化薄膜在室温下具有可见光致发光 (PL) 特性。3
包装
100 g in steel cylinder
Recommended products
推荐使用 Monel 控制阀 Z261793、Z261807 或 Monel 气体调节器 Z405981、Z406007。