tetrafluorosilane

• ChemBase ID: 138895
• Molecular Formular: F4Si
• Molecular Mass: 104.0791128
• Monoisotopic Mass: 103.97053941
• SMILES: F[Si](F)(F)F
• Canonical SMILES: F[Si](F)(F)F
• InChI: InChI=1S/F4Si/c1-5(2,3)4
• InChIKey: ABTOQLMXBSRXSM-UHFFFAOYSA-N

NAMES AND DATABASE IDS

Names

• IUPAC name: tetrafluorosilane
• IUPAC Traditional name: silicon tetrafluoride
• Synonyms: Silicon(IV) fluoride; Silicon tetrafluoride; 氟化硅(IV); 四氟化硅

Database IDs

• CAS Number: 7783-61-1
• EC Number: 232-015-5
• MDL Number: MFCD00040533
• PubChem SID: 24869885; 162233146
• PubChem CID: 24556

CALCULATED PROPERTIES

• H Acceptors: 0
• H Donor: 0
• LogD (pH = 5.5): 0.914
• LogD (pH = 7.4): 0.914
• Log P: 0.914
• Molar Refractivity: 6.0052 cm^3
• Polarizability: 3.9217172 Å^3
• Polar Surface Area: 0.0 Å^2
• Rotatable Bonds: 0
• Lipinski's Rule of Five: true

PROPERTIES

Physical Property

• Melting Point: -90 °C(lit.)
• Boiling Point: -86 °C(lit.)
• Density: 3.57 g/mL at 25 °C(lit.)
• Transition Temperature: critical temperature -14.2 °C

Safety Information

• RTECS: VW2327000
• European Hazard Symbols: Highly toxic (T+)
• UN Number: 1859
• German water hazard class: 3
• Hazard Class: 2.3
• Risk Statements: 14-26/27/28-31-34
• Safety Statements: 23-26-36/37/39-45
• GHS Pictograms: GHS05; GHS06
• GHS Signal Word: Danger
• GHS Hazard statements: H300 +H310 + H330-H314
• GHS Precautionary statements: P260-P264-P280-P284-P301 + P310-P302 + P350
• Personal Protective Equipment: Faceshields, full-face respirator (US), Gloves, Goggles, multi-purpose combination respirator cartridge (US)
• RID/ADR: UN 1859 2.3
• Supplemental Hazard Statements: Contact with water liberates toxic gas., Reacts violently with water.

Product Information

• Purity: ≥99.99%
• Grade: electronic grade
• Impurities: <0.5 ppm Carbon monoxide (CO); <1 ppm Argon + oxygen (Ar + O2); <1 ppm Carbon dioxide (CO2); <10 ppm Methane (CH4); <3 ppm Nitrogen (N2); <50 ppm Hydrogen fluoride (HF)
• Linear Formula: SiF4

DETAILS

Sigma Aldrich - 463019

Application
Silicon tetrafluoride is used in ion-implantation processes and as a precursor to fluorinated silica via plasma-assisted CVD. Mixtures of SiF4-SiH4-H2 have recently been used to deposit polycrystalline silicon thin films via remote plasma chemical vapor deposition (RPCVD).1,2 Such fluorinated thin films show visible photoluminescence (PL) at room temperature.3
Packaging
100 g in steel cylinder
Recommended products
Monel control valves Z261793, Z261807 or Monel gas regulators Z405981, Z406007 are recommended.