Silane

• Catalog No.: 333891
• CAS Number: 7803-62-5
• M. F.: H4Si
• M. W.: 32.11726
• Purity: ≥99.998%

SYNONYMS

• Title: 硅烷
• IUPAC name: silane
• IUPAC Traditional name: silane
• Synonyms: 四氢化硅; Silicon tetrahydride

DATABASE IDS

• EC Number: 232-263-4
• MDL Number: MFCD00011228
• CAS Number: 7803-62-5
• PubChem SID: 24860199

PROPERTIES

• Personal Protective Equipment: Eyeshields, Faceshields, Gloves, half-mask respirator (US), multi-purpose combination respirator cartridge (US)
• GHS Precautionary statements: P210
• RID/ADR: UN 2203 2.1
• Risk Statements: 12-17-20
• RTECS: VV1400000
• Safety Statements: 9-16-33-36/37/39
• Hazard Class: 2.1
• UN Number: 2203
• German water hazard class: 1
• GHS Signal Word: Danger
• GHS Hazard statements: H220-H332
• European Hazard Symbols: Highly flammable (F+)
• European Hazard Symbols: Harmful (Xn)
• Grade: electronic grade
• Impurities: <1 ppm Carbon dioxide (CO2)
• Impurities: <1 ppm Carbon monoxide (CO)
• Impurities: <1 ppm Chlorosilanes
• Impurities: <1 ppm THC
• Impurities: <1 ppm Trisilane (Si3H8)
• Impurities: <1 ppm Water (H2O)
• Impurities: <100 ppm Hydrogen (H2)
• Impurities: <2 ppm Nitrogen (N2)
• Impurities: <2 ppm Siloxanes
• Impurities: <5 ppm Disilane (Si2H6)
• Linear Formula: SiH4
• Purity: ≥99.998%
• Apperance: gas
• Boiling Point: -112 °C(lit.)
• Density: 1.114 g/mL at 25 °C(lit.)
• Melting Point: -185 °C(lit.)
• Resistivity: >1000 Ω-cm
• Transition Temperature: critical temperature -3.4 °C
• Vapor Density: 1.1 (vs air)

DETAILS

Description (English)

Application
Silane is used in the deposition of amorphous silicon, epitaxial silicon and silicon based dielectrics. Polycrystalline films can be deposited on silicon wafers and glass substrates via remote plasma chemical vapor deposition (RPCVD) using a SiH4-SiF2-H2 gas mixture.1,2 Silane is used widely as a dopant in the formation of III-IV semiconductor materials.3
Recommended products
Stainless steel regulators Z527416 or Z527424 are recommended.

Description (简体中文)

Application
将硅烷用于无定形硅、外延硅和硅基电介质的沉积。可利用 SiH4-SiF2-H2 气体混合物通过远程等离子体化学气相沉积 (RPCVD) 在硅晶片和玻璃基底上沉积多晶薄膜。1,2硅烷在形成 III-IV 半导体材料时广泛用作掺杂剂。3
Recommended products
建议使用不锈钢调节器 Z527416 或 Z527424。