Disilane

• Catalog No.: 463043
• CAS Number: 1590-87-0
• M. F.: H6Si2
• M. W.: 62.21864

SYNONYMS

• Title: 乙硅烷
• IUPAC name: disilane
• IUPAC Traditional name: disilane

DATABASE IDS

• PubChem SID: 24869889
• CAS Number: 1590-87-0
• EC Number: 216-466-5
• MDL Number: MFCD00054678

PROPERTIES

• GHS Signal Word: Danger
• GHS Hazard statements: H220-H280-H312-H315-H319-H332-H334-H335
• European Hazard Symbols: Flammable (F)
• European Hazard Symbols: Harmful (Xn)
• Personal Protective Equipment: Eyeshields, Faceshields, Gloves, half-mask respirator (US), multi-purpose combination respirator cartridge (US)
• GHS Precautionary statements: P210-P261-P280-P305 + P351 + P338-P342 + P311-P410 + P403
• RID/ADR: UN 3161 2.1
• Risk Statements: 17-20/21-36/37/38-42
• Safety Statements: 16-24-26-36/37/39
• Hazard Class: 2.1
• UN Number: 3161
• German water hazard class: 3
• Grade: electronic grade
• Impurities: ≤50 ppm Higher silanes
• Impurities: <0.2 ppm Chlorosilanes
• Impurities: <1 ppm Argon (Ar) + Oxygen (O2)
• Impurities: <1 ppm Carbon dioxide (CO2)
• Impurities: <1 ppm Nitrogen (N2)
• Impurities: <1 ppm THC
• Impurities: <1 ppm Water
• Impurities: <5 ppm Siloxanes
• Linear Formula: Si2H6
• Apperance: gas
• Boiling Point: -14.5 °C(lit.)
• Flash Point: <10 °C
• Flash Point: <50 °F
• Melting Point: -132.6 °C(lit.)
• Transition Temperature: critical temperature 150.9 °C

DETAILS

Description (English)

Features and Benefits
Disilane is used for the deposition of amorphous silicon, epitaxial silicon and silicon based dielectrics via rapid low-temperature chemical vapor depsition (LTCVD).2 Disilane is also used in the epitaxial growth of SiGe films by molecular beam epitaxy (MBE) in conjunction with solid sources of germanium.3 Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics.4
General description
Atomic number of base material: 14 Silicon
Packaging
20 g in ss cylinder
Application
Precursor for the rapid, low temperature deposition of epitaxial silicon and silicon-based dielectrics.1
Recommended products
Stainless steel regulators Z527416 or Z527424 are recommended.

Description (简体中文)

Features and Benefits
通过快速低温化学气相沉积 (LTCVD)，本品可用于无定形硅、外延硅和硅基电介质的沉积。2通过分子束外延 (MBE)，与锗的固体原料相结合，还可用于硅锗薄膜的外延生长。3外延硅和硅基电介质快速低温沉积的前体。4
General description
Atomic number of base material: 14 Silicon
包装
20 g in ss cylinder
Application
外延硅和硅基电介质快速低温沉积的前体。1
Recommended products
推荐使用不锈钢调节器 Z527416 或 Z527424。