Bis(methyl-η5-cyclopentadienyl)dimethylhafnium

• Catalog No.: 725501
• CAS Number: 68193-43-1
• M. F.: C14H20Hf
• M. W.: 366.7986

SYNONYMS

• Title: 二(甲基-η5-环戊二烯)二甲基铪
• IUPAC name: bis(3-methylcyclopenta-2,4-dien-1-ide); dimethylhafniumbis(ylium)
• IUPAC Traditional name: bis(3-methylcyclopenta-2,4-dien-1-ide); dimethylhafniumbis(ylium)
• Synonyms: HfD-CO2; HFCMME

DATABASE IDS

• CAS Number: 68193-43-1
• MDL Number: MFCD16875684

PROPERTIES

• Linear Formula: Hf[C5H4(CH3)]2(CH3)2
• Apperance: white waxy solid
• Boiling Point: 80-120 °C/0.3-0.5 mmHg(lit.)
• Density: 1.60 g/mL±0.01 g/mL at 25 °C
• Melting Point: 60 °C(lit.)
• GHS Signal Word: Warning
• GHS Hazard statements: H315-H319-H335
• European Hazard Symbols: Irritant (Xi)
• GHS Precautionary statements: P261-P305 + P351 + P338
• Risk Statements: 36/37/38
• Safety Statements: 24/25-26-36/37/39
• German water hazard class: 3

DETAILS

Description (English)

Frequently Asked Questions
Live Chat and Frequently Asked Questions are available for this Product.
Application
Advanced precursor for atomic layer deposition of HfO2 thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications.1 Excellent properties of HfO2 and ZrO2 films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.2
Features and Benefits
Compatible with a variety of oxidants in ALD growth processes across a wide temperature range exhibiting self limiting growth up to 400 °C. Precursor volatility and thermal stability properties enable easy materials transport from bubblers into conventional deposition tools.
General description
Atomic number of base material: 72 Hafnium
Packaging
10 g in ss cylinder
Packaged in stainless steel cylinders compatible with conventional deposition systems. Precursors may be used in liquid injection systems as dilute solutions and in combination with a variety of other sources to deposit mixed oxides.
Protocols & Applications
Precursors Packaged for Depositions Systems

Description (简体中文)

Frequently Asked Questions
Live Chat and Frequently Asked Questions are available for this Product.
Application
Advanced precursor for atomic layer deposition of HfO2 thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications.1 Excellent properties of HfO2 and ZrO2 films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.2
Features and Benefits
Compatible with a variety of oxidants in ALD growth processes across a wide temperature range exhibiting self limiting growth up to 400 °C. Precursor volatility and thermal stability properties enable easy materials transport from bubblers into conventional deposition tools.
General description
Atomic number of base material: 72 Hafnium
包装
10 g in ss cylinder
Packaged in stainless steel cylinders compatible with conventional deposition systems. Precursors may be used in liquid injection systems as dilute solutions and in combination with a variety of other sources to deposit mixed oxides.
Protocols & Applications
Precursors Packaged for Depositions Systems