Cadmium zinc telluride

• Catalog No.: 716707
• M. F.: CdH2Te2Zn
• M. W.: 435.00688
• Purity: 99.9999% trace metals basis

SYNONYMS

• Title: 碲化镉锌
• IUPAC name: tellanylidenecadmium; tellanylidenezinc
• IUPAC Traditional name: cadmium telluride; zinc telluride
• Synonyms: CZT; CTZ

PROPERTIES

• Empirical Formula (Hill Notation): Cd0.9Zn0.1Te
• Purity: 99.9999% trace metals basis
• Melting Point: 1100-1150 °C
• European Hazard Symbols: Harmful (Xn)
• European Hazard Symbols: Nature polluting (N)
• RID/ADR: UN 2570 6.1/PG 3
• Risk Statements: 45-20/21/22-50/53
• Safety Statements: 53.1-45-60-61
• Hazard Class: 6.1
• UN Number: 2570
• Packing Group: 3
• German water hazard class: 3

DETAILS

Description (English)

Application
A direct bandgap semiconductor, it is used in a variety of applications, including radiation detectors, photorefractive gratings, electro-optic modulators, solar cells, and terahertz generation and detection. The band gap varies from approximately 1.4 to 2.2 eV, depending on composition.
Packaging
5 g in glass bottle

Description (简体中文)

Application
一种直接带隙半导体，用途广泛，包括辐射探测器、光折变光栅、电光调制器、太阳能电池和太赫兹波产生与探测。带隙根据组成而变化，范围为约 1.4 至 2.2eV。
包装
5 g in glass bottle