Gallium antimonide

• Catalog No.: 651478
• CAS Number: 12064-03-8
• M. F.: GaH2Sb
• M. W.: 193.49888

SYNONYMS

• Title: 锑化镓
• IUPAC name: gallanylidynestibane
• IUPAC Traditional name: gallium antimonide

DATABASE IDS

• PubChem SID: 24883831
• CAS Number: 12064-03-8
• EC Number: 235-058-8
• MDL Number: MFCD00016101

PROPERTIES

• Diam. × Thickness: 2 in. × 0.5 mm
• Linear Formula: GaSb
• Apperance: (single crystal substrate)
• Density: 5.619 g/mL at 25 °C
• Density: 5.62 g/mL at 25 °C(lit.)
• Melting Point: 710 °C
• Melting Point: 980 °C(lit.)
• Resistivity: ~0.1 Ω-cm
• Semiconductor Properties: <100>
• GHS Signal Word: Warning
• GHS Hazard statements: H302-H332-H411
• European Hazard Symbols: Harmful (Xn)
• European Hazard Symbols: Nature polluting (N)
• Personal Protective Equipment: dust mask type N95 (US), Eyeshields, Gloves
• GHS Precautionary statements: P273
• RID/ADR: UN 1549 6.1/PG 3
• Risk Statements: 20/22-51/53
• Safety Statements: 61
• Hazard Class: 6.1
• UN Number: 1549
• Packing Group: 3
• German water hazard class: 2

DETAILS

Description (English)

Packaging
1 ea in rigid mailer
Physical form
cubic (a = 6.095Å)
Physical properties
Thermal expansion: 6.1 x 10-6/oK; Thermal conductivity: 270 mW/cm.k at 300K; Mobility 600~800 cm2/V · sec
Undoped, P-type semiconductor, growth technique: LEC, carrier concentration = 1-2 × 10-17 cm-3, EPD <103 cm-2

Description (简体中文)

包装
1 ea in rigid mailer
Physical form
立方晶系 (a = 6.095Å)
Physical properties
未掺杂的 P 型半导体，生长技术：液封直拉法，载流子浓度 = 1-2×10-17cm-3，蚀坑密度 <103cm-2
热膨胀：6.1×10-6/oK；热导率：270mW/cm.k (300K)；迁移率 600~800cm2/V·s