Lanthanum aluminum oxide

• Catalog No.: 634735
• CAS Number: 12003-65-5
• M. F.: AlHLaO3
• M. W.: 214.893178
• Purity: ≥99.99% trace metals basis

SYNONYMS

• Title: 氧化铝镧
• IUPAC name: oxo[(oxolanthanio)oxy]alumane
• IUPAC Traditional name: oxo[(oxolanthanio)oxy]alumane
• Synonyms: 铝酸镧; Lanthanum aluminate

DATABASE IDS

• EC Number: 234-433-3
• PubChem SID: 24882648
• MDL Number: MFCD00144550
• CAS Number: 12003-65-5

PROPERTIES

• Description: single side polished
• Linear Formula: LaAlO3
• Purity: ≥99.99% trace metals basis
• Size: 10 mm × 10 mm × 0.5 mm
• Density: 6.52 g/mL at 25 °C(lit.)
• Dielectric Constant: ~25
• Melting Point: 2080 °C(lit.)
• Semiconductor Properties: <100>
• Personal Protective Equipment: Eyeshields, Gloves, type N95 (US), type P1 (EN143) respirator filter
• German water hazard class: 3

DETAILS

Description (English)

Other Notes
thermal expansion = 10 × 10-6/°C; loss tangent at 10 GHz = ~3 × 10-4 @ 300 K, 0.6 × 10-4 @ 77 K; insoluble in mineral acids at 25 °C, soluble in H3PO3 at >150 °C
Packaging
1 ea in rigid mailer
Physical form
Rhombohedral at 25 °C (a = 5.357 Å, c = 13.22 Å); Cubic at >435 °C (a = 3.821 Å)
Features and Benefits
Single crystal lanthanum aluminate substrate lattices have a good lattice match with most perovskite-structured materials. It is an excellent substrate for the epitaxial growth of magnetic and ferro-electric thin films and high-temperature superconductors. Due to its dielectric properties it is also posses properties for low-loss microwave and dielectric resonance applications.

Description (简体中文)

Other Notes
热膨胀 = 10×10-6/°C；10GHz 时损耗因数 = 约 3×10-4 (300K)，0.6×1-4 (77K)；25°C 时不溶于矿物酸，150°C 以上可溶于 H3PO3。
包装
1 ea in rigid mailer
Physical form
Rhombohedral at 25 °C (a = 5.357 Å, c = 13.22 Å); Cubic at >435 °C (a = 3.821 Å)
Features and Benefits
单晶铝酸镧基底晶格与大多数钙钛矿结构材料都有良好的晶格匹配性。它是磁性和铁电薄膜以及高温超导体外延生长的优质基底。由于其介电特性，它还可应用于低损耗微波和介电共振。