Germane

• Catalog No.: 463027
• CAS Number: 7782-65-2
• M. F.: GeH4
• M. W.: 76.67176
• Purity: ≥99.997%

SYNONYMS

• Title: 锗烷
• IUPAC name: germane
• IUPAC Traditional name: germane

DATABASE IDS

• CAS Number: 7782-65-2
• MDL Number: MFCD00011028
• EC Number: 231-961-6
• PubChem SID: 24869887

PROPERTIES

• Grade: electronic grade
• Impurities: <0.5 ppm Oxygen (O2)
• Impurities: <1 ppm Carbon monoxide + Trigermane (CO+Ge3H8)
• Impurities: <1 ppm THC
• Impurities: <1 ppm Water (H2O)
• Impurities: <2 ppm Carbon dioxide (CO2)
• Impurities: <2 ppm Nitrogen (N2)
• Impurities: <20 ppm Digermane (Ge2H6)
• Impurities: <5 ppm Chlorogermanes
• Impurities: <5 ppm Germoxanes
• Impurities: <50 ppm Hydrogen (H2)
• Linear Formula: GeH4
• Purity: ≥99.997%
• Apperance: gas
• Boiling Point: -88.4 °C(lit.)
• Melting Point: -165 °C(lit.)
• Transition Temperature: critical temperature 35 °C
• Vapor Density: 1.53 (-142 °C, vs air)
• GHS Signal Word: Danger
• GHS Hazard statements: H220-H280-H302-H330
• European Hazard Symbols: Highly flammable (F+)
• European Hazard Symbols: Highly toxic (T+)
• Personal Protective Equipment: Eyeshields, Faceshields, Gloves, half-mask respirator (US), multi-purpose combination respirator cartridge (US)
• GHS Precautionary statements: P210-P260-P284-P310-P410 + P403
• RID/ADR: UN 2192 2.3
• Risk Statements: 12-17-22-26
• RTECS: LY4900000
• Safety Statements: 16-24-26-36/37/39-45
• Hazard Class: 2.3
• UN Number: 2192
• German water hazard class: 3

DETAILS

Description (English)

Features and Benefits
Germane gas is used in the deposition of epitaxial1 and amorphous SiGe alloy layers used in the production of high performance devices including photovoltaic cells and integrated circuits (IC).2 Precursor to germanium-containing thin films by chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). A CVD precursor for germanium carbide semiconducting films.3
Packaging
15 g in ss cylinder
5 g in lecture bottle
Recommended products
Stainless steel regulators Z527416 or Z527424 are recommended.

Description (简体中文)

Features and Benefits
锗烷气用于外延1 和无定形硅锗合金层的沉积，以用于制造包括光伏电池和集成电路 (IC) 在内的高性能器件。2通过化学气相沉积 (CVD) 和分子束外延 (MBE) 形成含锗薄膜时的前体。碳化锗半导体膜的 CVD 前体。3
包装
15 g in ss cylinder
5 g in lecture btl
Recommended products
建议使用不锈钢调节器 Z527416 或 Z527424。