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Phosphine

Catalog No. 295647 Name Sigma Aldrich
CAS Number 7803-51-2 Website http://www.sigmaaldrich.com
M. F. H3P Telephone 1-800-521-8956
M. W. 33.997581 Fax
Purity ≥99.9995% Email
Storage Chembase ID: 110872

SYNONYMS

Title
磷化氢
IUPAC name
phosphane
IUPAC Traditional name
phosphane

DATABASE IDS

EC Number 232-260-8
CAS Number 7803-51-2
PubChem SID 24857800
MDL Number MFCD00011435

PROPERTIES

Grade electronic grade
Impurities <1 ppm Argon (Ar)
Impurities <1 ppm Arsine (AsH3)
Impurities <1 ppm Carbon dioxide (CO2)
Impurities <1 ppm Carbon monoxide (CO)
Impurities <1 ppm Methane (CH4)
Impurities <1 ppm Nitrogen (N2)
Impurities <1 ppm Oxygen (O2)
Impurities <1 ppm Water (H2O)
Linear Formula PH3
Purity ≥99.9995%
Apperance gas
Boiling Point -87.5 °C(lit.)
Transition Temperature critical temperature 51.3 °C
Vapor Density 1.15 (vs air)
GHS Pictograms GHS02
GHS Pictograms GHS04
GHS Pictograms GHS05
GHS Pictograms GHS06
GHS Pictograms GHS09
GHS Signal Word Danger
GHS Hazard statements H220-H280-H314-H330-H400
European Hazard Symbols Highly flammable Highly flammable (F+)
European Hazard Symbols Highly toxic Highly toxic (T+)
European Hazard Symbols Nature polluting Nature polluting (N)
MSDS Link Download
Personal Protective Equipment Faceshields, Gloves, Goggles, half-mask respirator (US), multi-purpose combination respirator cartridge (US)
GHS Precautionary statements P210-P260-P273-P280-P284-P305 + P351 + P338
RID/ADR UN 2199 2.3
Risk Statements 12-17-26-34-50
RTECS SY7525000
Safety Statements 28-36/37-45-61-63
Hazard Class 2.3
UN Number 2199
German water hazard class 2

DETAILS

Description (English)
Application
Phosphine is used primarily in the manufacture of III-IV semiconductor materials by OMCVD and as a dopant in crystalline and amorphous silicon.
Precursor to III-V semiconductor thin films. Also useful as a dopant for crystalline and amorphous silicon.
General description
Atomic number of base material: 15 Phosphorus
Packaging
10, 50 g in ss cylinder
Recommended products
Stainless steel regulators Z527416 or Z527424 are recommended.
Description (简体中文)
Application
III-V 半导体薄膜前体。还用作结晶硅和无定型硅中的掺杂物。
磷化氢主要用于通过 OMCVD 制造 III-IV 半导体材料以及作为结晶硅和无定型硅中的掺杂物。
General description
Atomic number of base material: 15 Phosphorus
包装
10, 50 g in ss cylinder
Recommended products
推荐使用不锈钢调节器 Z527416 或 Z527424。

REFERENCES