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2370-88-9 molecular structure
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2,4,6,8-tetramethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane

ChemBase ID: 108029
Molecular Formular: C4H16O4Si4
Molecular Mass: 240.50944
Monoisotopic Mass: 240.01256512
SMILES and InChIs

SMILES:
C[SiH]1O[SiH](C)O[SiH](C)O[SiH](C)O1
Canonical SMILES:
C[SiH]1O[SiH](C)O[SiH](O[SiH](O1)C)C
InChI:
InChI=1S/C4H16O4Si4/c1-9-5-10(2)7-12(4)8-11(3)6-9/h9-12H,1-4H3
InChIKey:
BQYPERTZJDZBIR-UHFFFAOYSA-N

Cite this record

CBID:108029 http://www.chembase.cn/molecule-108029.html

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NAMES AND DATABASE IDS

NAMES AND DATABASE IDS

Names Database IDs
IUPAC name
2,4,6,8-tetramethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane
IUPAC Traditional name
2,4,6,8-tetramethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane
Synonyms
1,3,5,7-Cyclotetra(methylsiloxane)
1,3,5,7-Tetramethylcyclotetrasiloxane
2,4,6,8-TETRAMETHYLCYCLOTETRASILOXANE
TMCTS
2,4,6,8-Tetramethylcyclotetrasiloxane
2,4,6,8-四甲基环四硅氧烷
CAS Number
2370-88-9
EC Number
219-137-4
MDL Number
MFCD00039567
Beilstein Number
1787074
1775282
PubChem SID
24873664
162093798
PubChem CID
6327421

CALCULATED PROPERTIES

CALCULATED PROPERTIES

JChem
H Acceptors H Donor
LogD (pH = 5.5) -1.1324  LogD (pH = 7.4) -1.1324 
Log P -1.1324  Molar Refractivity 32.3836 cm3
Polarizability 22.066053 Å3 Polar Surface Area 36.92 Å2
Rotatable Bonds Lipinski's Rule of Five true 

PROPERTIES

PROPERTIES

Physical Property Safety Information Product Information Bioassay(PubChem)
Apperance
liquid expand Show data source
Melting Point
-69 °C(lit.) expand Show data source
-69°C expand Show data source
Boiling Point
134 °C(lit.) expand Show data source
134-135°C expand Show data source
Flash Point
24 °C expand Show data source
25°C(77°F) expand Show data source
75.2 °F expand Show data source
Density
0.986 g/mL at 25 °C(lit.) expand Show data source
0.991 expand Show data source
Refractive Index
1.3870 expand Show data source
n20/D 1.387(lit.) expand Show data source
Storage Warning
Moisture Sensitive expand Show data source
European Hazard Symbols
Irritant Irritant (Xi) expand Show data source
UN Number
1993 expand Show data source
UN1993 expand Show data source
MSDS Link
Download expand Show data source
Download expand Show data source
Download expand Show data source
Download expand Show data source
German water hazard class
3 expand Show data source
Hazard Class
3 expand Show data source
Packing Group
3 expand Show data source
III expand Show data source
Risk Statements
10 expand Show data source
10-36 expand Show data source
Safety Statements
16-26-36 expand Show data source
26 expand Show data source
TSCA Listed
expand Show data source
GHS Pictograms
GHS02 expand Show data source
GHS07 expand Show data source
GHS Signal Word
Warning expand Show data source
GHS Hazard statements
H226 expand Show data source
H226-H319 expand Show data source
GHS Precautionary statements
P210-P241-P303+P361+P353-P305+P351+P338-P403+P235-P501A expand Show data source
P305 + P351 + P338 expand Show data source
Personal Protective Equipment
Eyeshields, Faceshields, full-face respirator (US), Gloves, multi-purpose combination respirator cartridge (US), type ABEK (EN14387) respirator filter expand Show data source
RID/ADR
UN 1993 3/PG 3 expand Show data source
Storage Temperature
2-8°C expand Show data source
Purity
≥95% (GC) expand Show data source
≥99.5% expand Show data source
≥99.999% trace metals basis expand Show data source
95% expand Show data source
99% expand Show data source
Grade
technical expand Show data source
Certificate of Analysis
Download expand Show data source
Linear Formula
(HSiCH3O)4 expand Show data source

DETAILS

DETAILS

MP Biomedicals MP Biomedicals Sigma Aldrich Sigma Aldrich
MP Biomedicals - 05205798 external link
MP Biomedicals Rare Chemical collection
Sigma Aldrich - 424811 external link
Application
Compound undergoes hydrosilylation reactions.1
Features and Benefits
Precursor for gate dielectrics in thin-film transistors (TFT),2 and is a component of photochemically formed SiOX monolayers on TiO.3
Sigma Aldrich - 512990 external link
Features and Benefits
Precursor for gate dielectrics in thin-film transistors (TFT),1 and is a component of photochemically formed SiOX monolayers on TiO.2
General description
Atomic number of base material: 14 Silicon
Packaging
25, 100 mL in glass bottle
Sigma Aldrich - 87797 external link
Features and Benefits
Precursor for gate dielectrics in thin-film transistors (TFT),1 and is a component of photochemically formed SiOX monolayers on TiO.2

REFERENCES

REFERENCES

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PATENTS

PATENTS

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INTERNET

INTERNET

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